FGH75T65SQDTL4
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Specification
集电极—发射极最大电压 VCEO | 650 V |
安装方式 | Through Hole |
栅极阈值电压-VGE(th) | 20 V |
工作温度范围 | - 55 C~+ 175 C |
封装 | TO-247-3 |
Pd-功率耗散 | 375 W |
栅极/发射极最大电压 | 20 V |
集电极电流Ic | 150 A |
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IGBT 沟槽型场截止 650V 150A 通孔 TO-247
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