FQA70N10
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Specification
封装 | TO-3PN-3 |
Rds On-漏源导通电阻 | 25 mOhms |
高度 | 20.1 mm |
Vds-漏源极击穿电压 | 100 V |
Vgs - 栅极-源极电压 | 25 V |
Pd-功率耗散 | 214 W |
长度 | 16.2 mm |
宽度 | 5 mm |
工作温度范围 | - 55 C~+ 175 C |
电路数量 | 1 Channel |
Id-连续漏极电流 | 70 A |
安装方式 | Through Hole |
晶体管极性 | MOSFET |
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