FQB4N80TM
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Specification
封装 | TO-263-3 |
宽度 | 9.65 mm |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
高度 | 4.83 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 30 V |
Vds-漏源极击穿电压 | 800 V |
长度 | 10.67 mm |
Pd-功率耗散 | 3.13 W |
Id-连续漏极电流 | 3.9 A |
Rds On-漏源导通电阻 | 3.6 Ohms |
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