FQD13N10LTM
In stock
- FQD13N10LTM Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
封装 | TO-252(DPAK) |
Vgs - 栅极-源极电压 | 20 V |
Rds On-漏源导通电阻 | 180 mOhms |
Pd-功率耗散 | 2.5 W |
长度 | 6.73 mm |
宽度 | 6.22 mm |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 10 A |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 100 V |
高度 | 2.39 mm |
Others include "FQD13N10LTM" parts
The following parts include 'FQD13N10LTM'
FQD13N10LTM Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
FQD13N10LTM
ON
Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
FQD13N10LTM
ON
N沟道,100V,10A,180mΩ@10V
Learn More >
-
- View All Newest Products from Omron