FQD19N10LTM
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Specification
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 2.5 W |
Vgs - 栅极-源极电压 | 20 V |
Id-连续漏极电流 | 15.6 A |
长度 | 6.73 mm |
封装 | TO-252-3 |
高度 | 2.39 mm |
Rds On-漏源导通电阻 | 100 mOhms |
宽度 | 6.22 mm |
Vds-漏源极击穿电压 | 100 V |
工作温度范围 | - 55 C~+ 150 C |
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表面贴装型 N 通道 100V 15.6A(Tc) 2.5W(Ta),50W(Tc) D-Pak
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FQD19N10LTM
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表面贴装型 N 通道 100V 15.6A(Tc) 2.5W(Ta),50W(Tc) D-Pak
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