FQD20N06TM
Manufacturer:
Mfr. Part #:
FQD20N06TM
Allchips #:
R001-FQD20N06TM-4-H-23+-X-Y
Description:
N沟道,60V,16.8A,63mΩ@10V
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Specification
Vgs - 栅极-源极电压 | 25 V |
Vds-漏源极击穿电压 | 60 V |
Pd-功率耗散 | 2.5 W |
晶体管极性 | MOSFET |
封装 | TO-252(DPAK) |
Rds On-漏源导通电阻 | 63 mOhms |
工作温度范围 | - 55 C~+ 150 C |
高度 | 2.39 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
长度 | 6.73 mm |
Id-连续漏极电流 | 16.8 A |
宽度 | 6.22 mm |
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