FQD8P10TM
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Specification
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
封装 | TO-252-3 |
工作温度范围 | - 55 C~+ 150 C |
高度 | 2.39 mm |
Vds-漏源极击穿电压 | 100 V |
长度 | 6.73 mm |
宽度 | 6.22 mm |
Id-连续漏极电流 | 6.6 A |
Pd-功率耗散 | 2.5 W |
Vgs - 栅极-源极电压 | 30 V |
Rds On-漏源导通电阻 | 530 mOhms |
安装方式 | SMD/SMT |
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