FQP12N60C
Manufacturer:
Mfr. Part #:
FQP12N60C
Allchips #:
R001-FQP12N60C-4-H-0000-X-Y
Description:
N沟道,600V,12A,650mΩ@10V
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Specification
电路数量 | 1 Channel |
封装 | TO-220-3 |
晶体管极性 | MOSFET |
高度 | 16.3 mm |
Pd-功率耗散 | 225 W |
安装方式 | Through Hole |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 12 A |
Vgs - 栅极-源极电压 | 30 V |
Rds On-漏源导通电阻 | 650 mOhms |
长度 | 10.67 mm |
宽度 | 4.7 mm |
Vds-漏源极击穿电压 | 600 V |
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