FQPF7N65C
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Specification
Vds-漏源极击穿电压 | 650V |
Pd-功率耗散 | 52W(Tc) |
安装方式 | 通孔 |
Id-连续漏极电流 | 7A(Tc) |
工作温度范围 | -55°C~150°C(TJ) |
Rds On-漏源导通电阻 | 1.4Ω @ 3.5A,10V |
封装 | TO-220-3整包 |
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Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
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Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Tube
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Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Tube
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