FQPF85N06
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Specification
Rds On-漏源导通电阻 | 10 mOhms |
晶体管极性 | MOSFET |
Pd-功率耗散 | 62 W |
高度 | 16.07 mm |
Vds-漏源极击穿电压 | 60 V |
工作温度范围 | - 55 C~+ 175 C |
Id-连续漏极电流 | 53 A |
长度 | 10.36 mm |
宽度 | 4.9 mm |
封装 | TO-220F-3 |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 25 V |
电路数量 | 1 Channel |
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