FQU10N20CTU
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Specification
封装 | I-PAK |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 7.8 A |
Rds On-漏源导通电阻 | 360 mOhms |
长度 | 6.8 mm |
宽度 | 2.5 mm |
安装方式 | Through Hole |
高度 | 6.3 mm |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 200 V |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 30 V |
Pd-功率耗散 | 50 W |
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