HGT1S12N60A4DS
Manufacturer:
Mfr. Part #:
HGT1S12N60A4DS
Allchips #:
R001-HGT1S12N60A4DS-4-H-1801-X-N
Description:
Trans IGBT Chip N-CH 600V 54A 167mW 3-Pin(2+Tab) D2PAK Tube
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Specification
安装方式 | 表面贴装型 |
Pd-功率耗散 | 167W |
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 600V |
封装 | TO-263AB |
晶体管极性 | ,晶体管-UGBT,MOSFET-单 |
Vgs - 栅极-源极电压 | 17ns/96ns |
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