HGTD1N120BNS9A
Manufacturer:
Mfr. Part #:
HGTD1N120BNS9A
Allchips #:
R001-HGTD1N120BNS9A-4-H-0000-X-N
Description:
IGBT 1200V 5.3A 60W TO252AA
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Specification
高度 | 2.3 mm |
工作温度范围 | - 55 C~+ 150 C |
栅极/发射极最大电压 | 20 V |
封装 | TO-252AA-3 |
集电极—发射极最大电压 VCEO | 1200 V |
Pd-功率耗散 | 60 W |
集电极电流Ic | 5.3 A |
安装方式 | SMD/SMT |
栅极阈值电压-VGE(th) | 20 V |
长度 | 6.6 mm |
宽度 | 6.1 mm |
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