HUF75329D3ST
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Specification
晶体管极性 | MOSFET |
封装 | TO-252-3 |
Vds-漏源极击穿电压 | 55 V |
Id-连续漏极电流 | 20 A |
高度 | 2.39 mm |
工作温度范围 | - 55 C~+ 175 C |
Rds On-漏源导通电阻 | 26 mOhms |
Pd-功率耗散 | 128 W |
Vgs - 栅极-源极电压 | 20 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
长度 | 6.73 mm |
宽度 | 6.22 mm |
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表面贴装型 N 通道 55V 20A(Tc) 128W(Tc) TO-252AA
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