HUF75639S3
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Specification
Vds-漏源极击穿电压 | 100 V |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | Through Hole |
长度 | 10.29 mm |
宽度 | 4.83 mm |
Rds On-漏源导通电阻 | 25 mOhms |
工作温度范围 | - 55 C~+ 175 C |
封装 | TO-262-3 |
Id-连续漏极电流 | 56 A |
高度 | 7.88 mm |
Pd-功率耗散 | 200 W |
Vgs - 栅极-源极电压 | 20 V |
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