HUF75652G3
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Specification
封装 | TO-247-3 |
Pd-功率耗散 | 515 W |
Id-连续漏极电流 | 75 A |
长度 | 15.87 mm |
宽度 | 4.82 mm |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 8 mOhms |
高度 | 20.82 mm |
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 100 V |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
安装方式 | Through Hole |
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HUF75652G3
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Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube
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HUF75652G3
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Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube
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HUF75652G3
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Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube
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HUF75652G3
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通孔 N 通道 100V 75A(Tc) 515W(Tc) TO-247-3
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