J112
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Specification
安装方式 | Through Hole |
晶体管极性 | JFET |
封装 | TO-92 |
Rds On-漏源导通电阻 | 50 Ohms |
Vgs - 栅极-源极电压 | 1V@1µA |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 625 mW |
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