J175-D26Z
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Specification
封装 | TO-92-3 |
Pd-功率耗散 | 350mW |
安装方式 | 通孔 |
Vgs - 栅极-源极电压 | 3V@10nA |
工作温度范围 | -55°C~150°C(TJ) |
晶体管极性 | P通道 |
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