MC33172DR2G
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Specification
放大器类型 | Low Power Amplifier |
电源电流 | 440 uA |
工作温度范围 | - 40 C~+ 85 C |
封装 | SOIC-8 |
GBP-增益带宽积 | 1.8 MHz |
长度 | 5 mm |
宽度 | 4 mm |
电路数量 | 2 Channel |
安装方式 | 表面贴装型 |
每个通道的输出电流 | 5 mA |
电源电压 | 3 V~44 V |
压摆率(SR) | 2.1V/µs |
CMRR - 共模抑制比 | 80 dB |
高度 | 1.5 mm |
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MC33172DR2G
ON
双路 高压运放、低功耗运放;2.1 V/μs;带宽>=1.8MHz;偏置电流:20nA;失调电压:2mV 电流:220μA;电源:3V~44V,±1.5V-±22V;-40°C-85°C SOIC8
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MC33172DR2G
ON
双路 高压运放、低功耗运放;2.1 V/μs;带宽>=1.8MHz;偏置电流:20nA;失调电压:2mV 电流:220μA;电源:3V~44V,±1.5V-±22V;-40°C-85°C SOIC8
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