MCH6601-TL-E
In stock
- MCH6601-TL-E Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Id-连续漏极电流 | 200 mA |
Pd-功率耗散 | 800 mW |
封装 | SOT-363-6 |
电路数量 | 2 Channel |
Vgs - 栅极-源极电压 | 10 V |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 30 V |
Rds On-漏源导通电阻 | 10.4 Ohms |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 1.43 nC |
晶体管极性 | MOSFET |
Others include "MCH6601-TL-E" parts
The following parts include 'MCH6601-TL-E'
MCH6601-TL-E Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
MCH6601-TL-E
ON
Trans MOSFET P-CH Si 30V 0.2A 6-Pin MCPH T/R
Learn More >
-
- View All Newest Products from Omron