MCH6603-TL-H
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Specification
封装 | SOT-363-6 |
Pd-功率耗散 | 800 mW |
工作温度范围 | 150°C(TJ) |
Rds On-漏源导通电阻 | 23 mOhms |
Id-连续漏极电流 | 140 mA |
晶体管极性 | MOSFET",,"子类别 |
电路数量 | 2 Channel |
Vds-漏源极击穿电压 | 50 V |
安装方式 | SMD/SMT |
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