MJD117-1G
Manufacturer:
Mfr. Part #:
MJD117-1G
Allchips #:
R001-MJD117-1G-4-H-0000-X-Y
Description:
PNP,Vceo=100V,Ic=2A
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Specification
发射极 - 基极电压 VEBO | 5 V |
Pd-功率耗散 | 20 W |
集电极电流Ic | 2 A |
高度 | 6.22 mm |
晶体管极性 | PNP |
长度 | 6.73 mm |
封装 | DPAK-3 |
工作温度范围 | - 65 C~+ 150 C |
宽度 | 2.38 mm |
集电极—基极电压 VCBO | 100 V |
安装方式 | SMD/SMT |
最大集电极截止电流 | 20 uA |
集电极—发射极最大电压 VCEO | 100 V |
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