MJD122G
In stock
- MJD122G Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
集电极电流Ic | 8 A |
最大集电极截止电流 | 10 uA |
Pd-功率耗散 | 20 W |
高度 | 2.38 mm |
集电极—基极电压 VCBO | 100 V |
安装方式 | SMD/SMT |
集电极—发射极最大电压 VCEO | 100 V |
晶体管极性 | NPN |
工作温度范围 | - 65 C~+ 150 C |
长度 | 6.73 mm |
宽度 | 6.22 mm |
发射极 - 基极电压 VEBO | 5 V |
封装 | TO-252-3 (DPAK) |
Others include "MJD122G" parts
The following parts include 'MJD122G'
MJD122G Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
MJD122G
ON
Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube
Learn More >
-
-
-
MJD122D
Slkor
TO-252
Learn More >
-
-
-
MJD122G
ON
Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube
Learn More >
-
-
-
MJD122G
ON
Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube
Learn More >
-
-
-
MJD122T4
ST Microelectronics
Trans Darlington NPN 100V 8A 20000mW 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
MJD122T4
ST Microelectronics
内置反向二极管,NPN,100V,16A,20W
Learn More >
-
-
-
MJD122T4
ST Microelectronics
内置反向二极管,NPN,100V,16A,20W
Learn More >
-
-
-
MJD122T4
ST Microelectronics
内置反向二极管,NPN,100V,16A,20W
Learn More >
-
-
-
MJD122-1
ST Microelectronics
Trans Darlington NPN 100V 8A 20000mW 3-Pin(3+Tab) IPAK Tube
Learn More >
-
-
-
MJD122-1
ST Microelectronics
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3
Learn More >
-
- View All Newest Products from Omron