MJD45H11T4G
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Specification
高度 | 2.38 mm |
集电极电流Ic | 8A |
安装方式 | SMD/SMT |
晶体管极性 | PNP |
Pd-功率耗散 | 1.75W |
封装 | TO-252-2(DPAK) |
工作温度范围 | - 55 C~+ 150 C |
长度 | 6.73 mm |
宽度 | 6.22 mm |
电路数量 | Single |
集电极—发射极最大电压 VCEO | 80V |
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