MMBD6050LT1G
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Specification
Vr - 反向电压 | 70V |
反向恢复时间trr | 4nS |
封装 | SOT-23 |
安装方式 | 贴片 |
配置 | 独立式 |
Pd-功率耗散 | 300mW |
峰值反向工作电压VRWM | 70V |
反向漏电流Ir | 100nA |
最小工作温度 | -55℃ |
工作温度范围 | -55℃~+150℃ |
If-正向电流 | 200mA |
Vf - 正向电压 | 850mV |
最大工作温度 | +150℃ |
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MMBD6050LT1G
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70V,200mA,trr=4ns,VF=1.1V@100mA,PD=300mW
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MMBD6050LT1G
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70V,200mA,trr=4ns,VF=1.1V@100mA,PD=300mW
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70V,200mA,trr=4ns,VF=1.1V@100mA,PD=300mW
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Diode Small Signal Switching 0.2A 3-Pin SOT-23 T/R
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MMBD6050LT1G.
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SWITCHING DIODE 70V 200mA SOT-23
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SWITCHING DIODE 70V 200mA SOT-23
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