MMBF4391LT1G
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Specification
Pd-功率耗散 | 225mW |
Vds-漏源极击穿电压 | 30 V |
Vgs - 栅极-源极电压 | 4V@10nA |
工作温度范围 | -55°C~150°C(TJ) |
封装 | SOT-23-3 |
晶体管极性 | JFET |
安装方式 | SMD/SMT |
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JFET N-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
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JFET N-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
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