MMBF4393LT1G
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Specification
Vgs - 栅极-源极电压 | 500mV@10nA |
Pd-功率耗散 | 225mW |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 30 V |
工作温度范围 | -55°C~150°C(TJ) |
晶体管极性 | JFET |
封装 | SOT-23-3 |
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