MMBFJ108
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Specification
Rds On-漏源导通电阻 | 8 Ohms |
Pd-功率耗散 | 350 mW |
Vgs - 栅极-源极电压 | 3V@10nA |
晶体管极性 | JFET |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
封装 | SOT-23 |
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MMBFJ108
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