MMBFJ110
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Specification
封装 | SSOT-3 |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | - 25 V |
Pd-功率耗散 | 460 mW |
晶体管极性 | JFET |
Vgs - 栅极-源极电压 | 4V@10nA |
Id-连续漏极电流 | 10 mA |
Rds On-漏源导通电阻 | 18 Ohms |
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