MMBT3906LT1G
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Specification
Pd-功率耗散 | 300mW |
集电极电流Ic | 200mA |
晶体管类型 | PNP |
封装 | SOT-23-3 |
集电极—发射极最大电压 VCEO | 40V |
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The following parts include 'MMBT3906LT1G'
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双极晶体管 - 双极结型晶体管(BJT) AF TRANS GP BJT PNP 40V 0.2A
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MMBT3906LT1G
ON
PNP,Vceo=-40V,Ic=-200mA
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MMBT3906LT1G
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PNP,Vceo=-40V,Ic=-200mA
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MMBT3906LT1G
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PNP,Vceo=-40V,Ic=-200mA
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MMBT3906LT1H
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GENERAL PURPOSE TRANSISTOR PNP SILICON
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MMBT3906LT1G
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PNP,Vceo=-40V,Ic=-200mA
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MMBT3906LT1H
ON
TRANS PNP 40V 200MA BIPO SOT23-3
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MMBT3906LT1H
ON
TRANS PNP 40V 200MA BIPO SOT23-3
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SMMBT3906LT1G
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Trans GP BJT PNP 40V 0.2A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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SMMBT3906LT1G
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Trans GP BJT PNP 40V 0.2A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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