MMUN2212LT1G
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Specification
电路数量 | Single |
Pd-功率耗散 | 246mW |
集电极—发射极最大电压 VCEO | 50V |
集电极电流Ic | 100mA |
封装 | SOT-23-3 |
长度 | 2.9 mm |
工作温度范围 | - 55 C~+ 150 C |
高度 | 0.94 mm |
宽度 | 1.3 mm |
安装方式 | SMD/SMT |
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NSVMMUN2212LT1G
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晶体管 - 双极 (BJT) - 单,预偏置) NPN - 预偏压 50V 100mA 246mW 表面贴装型 SOT-23-3(TO-236)
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