MUN2112T1G
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Specification
封装 | SOT-23-3 |
Pd-功率耗散 | - |
工作温度范围 | - 55 C~+ 150 C |
集射极击穿电压(Vceo) | - |
集电极电流(Ic) | - |
安装方式 | SMD/SMT |
资格等级 | - |
长度 | 2.9 mm |
高度 | 1.09 mm |
宽度 | 1.5 mm |
类型 | PNP |
直流电流增益(hFE@Ic,Vce) | - |
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