MUN5213DW1T3G
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Specification
Pd-功率耗散 | 250mW |
高度 | 0.95 mm |
安装方式 | SMD/SMT |
最大集电极截止电流 | 500nA |
集电极—发射极最大电压 VCEO | 250mV@300µA,10mA |
晶体管极性 | Dual Bias Resistor Transistor |
封装 | SOT-363 |
宽度 | 1.25 mm |
集电极电流Ic | 100mA |
长度 | 2 mm |
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NSVMUN5213DW1T3G
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晶体管 - 双极 (BJT) - 阵列 - 预偏置 2 个 NPN 预偏压式(双) 50V 100mA 250mW 表面贴装型 SC-88/SC70-6/SOT-363
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NSVMUN5213DW1T3G
ON
晶体管 - 双极 (BJT) - 阵列 - 预偏置 2 个 NPN 预偏压式(双) 50V 100mA 250mW 表面贴装型 SC-88/SC70-6/SOT-363
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