NCS20092DR2G
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Specification
压摆率(SR) | 0.17V/µs |
封装 | SOIC-8 |
工作温度范围 | - 40 C~+ 125 C |
安装方式 | 表面贴装型 |
电路数量 | 2 Channel |
放大器类型 | Low Power Operational Amplifier |
CMRR - 共模抑制比 | 79 dB |
电源电流 | 23 uA |
GBP-增益带宽积 | 350 kHz |
每个通道的输出电流 | 8.5 mA |
电源电压 | 1.8 V~5.5 V |
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