NCV8402AMNWT1G
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Specification
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 14 V |
Vds-漏源极击穿电压 | 42 V |
安装方式 | SMD/SMT |
工作温度范围 | - 40 C~+ 150 C |
Pd-功率耗散 | 8.9 W |
Id-连续漏极电流 | 2 A |
封装 | DFN-6 |
资格等级 | AEC-Q101 |
Rds On-漏源导通电阻 | 165 mOhms |
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