NCV8402ASTT1G
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Specification
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 55 V |
Id-连续漏极电流 | 2 A |
Vgs - 栅极-源极电压 | 10 V |
工作温度范围 | - 40 C~+ 150 C |
资格等级 | AEC-Q101 |
封装 | SOT-223-3 |
Pd-功率耗散 | 1.7 W |
电路数量 | 2 Channel |
Rds On-漏源导通电阻 | 200 mOhms |
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