NDF08N60ZG
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Specification
Qg-栅极电荷 | 39 nC |
晶体管极性 | MOSFET",,"子类别 |
Id-连续漏极电流 | 7.5 A |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 30 V |
Pd-功率耗散 | 35 W |
Vds-漏源极击穿电压 | 600 V |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 950 mOhms |
封装 | TO-220-3 |
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Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube
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