NE5517DR2G
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Specification
封装 | SOIC-16 |
每个通道的输出电流 | 650 uA |
电源电流 | 2.6 mA |
输出类型 | Push Pull |
CMRR - 共模抑制比 | 80 dB |
放大器类型 | Transconductance Amplifier |
压摆率(SR) | 50V/µs |
安装方式 | SMD/SMT |
GBP-增益带宽积 | 2 MHz |
长度 | 10 mm |
宽度 | 4 mm |
电路数量 | 2 Channel |
电源电压 | 4 V~44 V |
工作温度范围 | 0 C~+ 70 C |
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