NGTB03N60R2DT4G
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Specification
Pd-功率耗散 | 49 W |
安装方式 | SMD/SMT |
栅极/发射极最大电压 | 20 V |
栅极阈值电压-VGE(th) | 20 V |
工作温度范围 | + 175 C |
集电极—发射极最大电压 VCEO | 600 V |
集电极电流Ic | 4.5 A |
封装 | DPAK-3 |
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