NJVMJD32CT4G
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Specification
资格等级 | AEC-Q101 |
最大集电极截止电流 | 50 uA |
封装 | DPAK |
集电极电流Ic | 3 A |
Pd-功率耗散 | 15 W |
集电极—基极电压 VCBO | 100 V |
安装方式 | SMD/SMT |
工作温度范围 | - 65 C~+ 150 C |
晶体管极性 | PNP |
发射极 - 基极电压 VEBO | 5 V |
集电极—发射极最大电压 VCEO | 100 V |
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NJVMJD32CT4G
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TRANS PNP 100V 3A DPAK
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NJVMJD32CT4G-VF01
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晶体管 - 双极 (BJT) - 单 PNP 100V 3A 3MHz 1.56W 表面贴装型 DPAK
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