NJVMJD350T4G
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Specification
封装 | TO-252-3 |
Pd-功率耗散 | 1.56W |
工作温度范围 | - 65 C~+ 150 C |
集射极击穿电压(Vceo) | 300V |
集电极电流(Ic) | 500mA |
安装方式 | SMD/SMT |
资格等级 | AEC-Q101 |
类型 | PNP |
直流电流增益(hFE@Ic,Vce) | - |
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