NSBA114YDXV6T1
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Specification
晶体管极性 | 2个PNP预偏压式(双) |
集电极电流Ic | 100mA |
Pd-功率耗散 | 500mW |
集电极—发射极最大电压 VCEO | 250mV@300µA,10mA |
封装 | SOT-563 |
最大集电极截止电流 | 500nA |
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NSBA114YDXV6T1G
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Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
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NSBA114YDXV6T1G
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Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
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