NSBC114EPDP6T5G
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Specification
Pd-功率耗散 | 339mW |
最大集电极截止电流 | 500nA |
晶体管极性 | 1个NPN,1个PNP-预偏压式(双) |
集电极电流Ic | 100mA |
封装 | SOT-963 |
集电极—发射极最大电压 VCEO | 50V |
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晶体管 - 双极 (BJT) - 阵列 - 预偏置 1 个 NPN,1 个 PNP - 预偏压式(双) 50V 100mA 339mW 表面贴装型 SOT-963
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