NSBC114YDXV6T1G
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Specification
Pd-功率耗散 | 500mW |
晶体管极性 | 2个NPN预偏压式(双) |
集电极电流Ic | 100mA |
集电极—发射极最大电压 VCEO | 50V |
封装 | SOT-563,SOT-666 |
最大集电极截止电流 | 500nA |
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NSBC114YDXV6T1
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Trans Digital BJT NPN 50V 100mA 500mW 6-Pin SOT-563 T/R
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NSBC114YDXV6T1G
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Trans Digital BJT NPN 50V 100mA 500mW 6-Pin SOT-563 T/R
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NSBC114YDXV6T1G
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晶体管 - 双极 (BJT) - 阵列 - 预偏置 2 个 NPN 预偏压式(双) 50V 100mA 500mW 表面贴装型 SOT-563
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NSBC114YDXV6T1G
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晶体管 - 双极 (BJT) - 阵列 - 预偏置 2 个 NPN 预偏压式(双) 50V 100mA 500mW 表面贴装型 SOT-563
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