NSS40301MDR2G
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Specification
晶体管极性 | 2NPN(双) |
集电极—发射极最大电压 VCEO | 40V |
最大集电极截止电流 | 100nA(ICBO) |
集电极电流Ic | 3A |
封装 | SOIC-8 |
工作温度范围 | - 55 C~+ 150 C |
电路数量 | Dual |
安装方式 | SMD/SMT |
Pd-功率耗散 | 653mW |
长度 | 5 mm |
宽度 | 4 mm |
高度 | 1.5 mm |
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晶体管 - 双极 (BJT) - 阵列 2 NPN(双) 40V 3A 100MHz 653mW 表面贴装型 8-SOIC
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