NST857BDP6T5G
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Specification
长度 | 1 mm |
宽度 | 0.8 mm |
集电极电流Ic | 100mA |
工作温度范围 | - 55 C~+ 150 C |
电路数量 | Dual |
安装方式 | SMD/SMT |
封装 | SOT-963 |
Pd-功率耗散 | 350mW |
高度 | 0.37 mm |
晶体管极性 | 2 PNP(双) |
集电极—发射极最大电压 VCEO | 45V |
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