NSVBC143ZPDXV6T1G
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Specification
封装 | SOT-563 |
集电极—发射极最大电压 VCEO | 250mV@1mA,10mA |
晶体管极性 | 1个NPN,1个PNP-预偏压式(双) |
最大集电极截止电流 | 500nA |
集电极电流Ic | 100mA |
Pd-功率耗散 | 500mW |
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Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount
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