NSVEMT1DXV6T1G
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Specification
封装 | SOT-563 |
Pd-功率耗散 | 500mW |
集射极击穿电压(Vceo) | 60V |
资格等级 | AEC-Q101 |
直流电流增益(hFE@Ic,Vce) | - |
集电极电流(Ic) | 100mA |
类型 | PNP |
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