NSVJ3910SB3T1G
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Specification
Pd-功率耗散 | 400 mW |
Vds-漏源极击穿电压 | 25 V |
高度 | 0.9 mm |
晶体管极性 | JFET |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 50 mA |
资格等级 | AEC-Q101 |
长度 | 2.9 mm |
宽度 | 1.6 mm |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 600mV@100µA |
封装 | CPH-3 |
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