NSVMUN5316DW1T1G
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Specification
资格等级 | AEC-Q101 |
封装 | SC-88/SC70-6/SOT-363 |
晶体管极性 | 1个NPN,1个PNP-预偏压式(双) |
Pd-功率耗散 | 250mW |
最大集电极截止电流 | 500nA |
集电极电流Ic | 100mA |
集电极—发射极最大电压 VCEO | 50V |
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晶体管 - 双极 (BJT) - 阵列 - 预偏置 1 个 NPN,1 个 PNP - 预偏压式(双) 50V 100mA 250mW 表面贴装型 SC-88/SC70-6/SOT-363
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NSVMUN5316DW1T1G
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晶体管 - 双极 (BJT) - 阵列 - 预偏置 1 个 NPN,1 个 PNP - 预偏压式(双) 50V 100mA 250mW 表面贴装型 SC-88/SC70-6/SOT-363
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